How to Use field-effect transistor in a Sentence

field-effect transistor

noun

• Leading chip manufacturers are already shifting to nanosheet devices, which swap the fin in today’s fin field-effect transistors for a stack of horizontal sheets of semiconductor.
  — IEEE Spectrum, 16 Apr. 2025
• The physical component responsible for this switching behavior is the transistor, most commonly a field-effect transistor.
  — Kaif Shaikh, Interesting Engineering, 4 Jan. 2026
• Complementary field-effect transistors will stack nanosheet transistors atop each other, increasing density and temperature.
  — IEEE Spectrum, 16 Apr. 2025
• Imec Take, for instance, nanosheet transistors and complementary field-effect transistors (CFETs).
  — IEEE Spectrum, 16 Apr. 2025
• The typical metal–oxide–semiconductor field-effect transistor (MOSFET) forms the basic building block of most modern intergrated circuits.
  — IEEE Spectrum, 11 Aug. 2017
• Researchers at Stanford University have demonstrated that field-effect transistors made from a single layer of molybdenum disulfide (MoS2) can successfully drive resistive random access memory.
  — IEEE Spectrum, 13 Dec. 2017
• The transistor in today’s ubiquitous CMOS chips is the metal-oxide-semiconductor field-effect transistor, or MOSFET.
  — IEEE Spectrum, 29 Nov. 2016
• The potential for TFETs to replace the ubiquitous metal-oxide-semiconductor field-effect transistor (MOSFET) has been appealing for more than a decade.
  — IEEE Spectrum, 9 Feb. 2016
• Wide-band gap metal-oxide thin-film transistors (TFTs) have never been quite as popular as the ubiquitous metal-oxide semiconductor field-effect transistors (MOSFET).
  — IEEE Spectrum, 11 Feb. 2016
• The transistors, silicon MOSFETs (metal-oxide semiconductor field-effect transistors), contain an oxide layer that’s particularly vulnerable to radiation damage.
  — Katherine Bourzac, IEEE Spectrum, 2 Apr. 2026
• Nine-atom-wide armchair GNRs (9-AGNRs) were synthesized via a bottom-up on-surface approach, integrated into field-effect transistors (FETs), and characterized before and after exposure using Raman spectroscopy and electrical transport measurements.
  — Prabhat Ranjan Mishra, Interesting Engineering, 17 July 2026